Phys 8910: "Special Research Topics: - Research Seminar


Date	Speaker/Lead	Title
01/23/2012	Nikolaus	Inindium-rich InGaN materials development and their integration and wide bandgap III-nitrides
01/30/2012	Sampath	V. Lebedev et al., "Electron and hole accumulation in InN/InGaN heterostructures," physica status solidi (c) 8 (2), 485-487 (2011).
02/06/2012	Kasuni	T. J. Prosa et al.; "Atom probe analysis of interfacial abruptness and clustering within a single In[sub x]Ga[sub 1 - x]N quantum well device on semipolar (10[overline 1][overline 1]) GaN substrate," Appl. Phys. Lett. 98, 191903 (2011)
02/13/2012	Ramazan	Núria Domènech-Amador et al., "Raman scattering study of anharmonic phonon decay in InN," Physical Review B 83 (24), 245203 (2011).
02/20/2012	Indika	V. Kachkanov et al., "InGaN epilayer characterization by microfocused x-ray reciprocal space mapping," Appl. Phys. Let. 99(18), pp.181909-181903 (2011).
02/27/2012	Marl	M. V. Durnev et al., "Indium incorporation and optical transitions in InGaN bulk materials and quantum wells with arbitrary polarity," Appl. Phys. Lett. 97, 051904 (2010).
03/05/2012	Ananta	G. Radtke et al., "Structure and chemistry of the Si(111)/AlN interface," Appl. Phys. Let. 100(1), pp.011910-011913 (2012).
03/12/2012	Sampath	G. Radtke et al., "Scanning transmission electron microscopy investigation of the Si(111)/AlN interface grown by metalorganic vapor phase epitaxy," Applied Physics Letters 97 (25), 251901-251903 (2010).
03/19/2012	Kasuni	B. H. Cardelino and C. A. Cardelino, "Dissociative Chemisorption of Trimethylgallium, Trimethylindium, and Ammonia on Gallium and Indium Nitride Substrates. A Computational Study," J. Phys. Chem. C 115(18) pp. 9090–9104 (2011).
03/26/2012	Ramazan	L. Teng, R. Zhang, Z.-L. Xie, T. Tao, Z. Zhang, Y.-C. Li, B. Liu, P. Chen, P. Han, and Y.-D. Zheng, "Raman Scattering Study of InxGa1-xN Alloys with Low Indium Compositions," Chinese Physics Letters 29 (2), 027803 (2012).
04/02/2012	Indika	V. Pavlovskii, E. Lutsenko, G. Yablonskii, A. Kolomys, V. Strelchuk, E. Avramenko, and M. Valakh, "Photoluminescence and Raman scattering in spatially inhomogeneous heteroepitaxial InGaN layers," J. Appl. Spectr. 78(4), pp.518-523 (2011).
04/09/2012	Marl	E. Tiras, M. Gunes, N. Balkan, and W. J. Schaff, "In rich In1−xGaxN: Composition dependence of longitudinal optical phonon energy," physica status solidi (b) 247 (1), 189-193 (2010).
04/16/2012	Ananta	J. Kuyyalil, M. Tangi, and S. M. Shivaprasad, "Dependence of crystal orientation and bandgap on substrate temperature of molecular-beam epitaxy grown InN on bare Al2O3 (0001)," J. Appl. Phys. 109 p. 093513 (2011).
04/23/2012	Sampath	Sergey Yu. Karpov, "Modeling of III-nitride light-emitting diodes: progress, problems, and perspectives," Proc. SPIE 7939, 79391C (2011).
04/30/2012	Kasuni	N. I. Buchan and J. M. Jasinski, "Calculation of unimolecular rate constants for common metalorganic vapor phase epitaxy precursors via RRKM theory," J. Cryst. Growth 106, pp.227-238 (1990).
05/07/2012	Ramazan	L. Simov·, D. Tzeli, M. Urban, I. Cernus·k, G. Theodorakopoulos and I. D. Petsalakis, "Structure and energetics of InN and GaN dimers," Chemical Physics 349, pp.98-108 (2008).
05/14/2012	Indika	T. Uchida, K. Kusakabe, and K. Ohkawa, "Influence of polymer formation on metalorganic vapor-phase epitaxial growth of AlN," J. Cryst. Growth 304, pp.133-140 (2007).
05/21/2012	Marl	A. Hirako and K. Ohkawa, "Effect of thermal radiation and absorption in GaN-MOVPE growth modeling on temperature distribution and chemical state," J. Cryst. Growth 276, pp.57-63 (2005).
June - Aug		Summer break
08/20/2012	Ananta	title - tba citation
08/27/2012	Sampath	H. Tokoi, A. Ohtake, K. Tago, K. Watanabe, and T. Mishima, "Development of GaN Growth Reaction Model Using Ab Initio Molecular Orbital Calculation and Computational Fluid Dynamics of Metalorganic Vapor-Phase Epitaxy," J. Electrochem. Soc., 159, pp. D270-D275 (2012).

Group III-nitride thin film growth and materials characterization