"High Operating Temperature SPLIT-OFF Band Infrared Detectors", Provisional Patent, (A. G. U. Perera, S. G. Matsik) U. S. Patent Application No. 11/849,464, electronically published by the International Bureau of WIPO on Mar. 6, 2008, under No. WO 2008/028181.
"UV-IR
Dual Band Detector", (A. G. U. Perera ) U. S. Patent Application No.
11/585048, Publication No.US-2007/0158638-A1,
issued on July 12, 2007.
125. "Quantum Dot Structures for Multi-Band Infrared and Terahertz Radiation Detection" (G. Ariyawansa and A. G. U. Perera) “Handbook of Self Assembled Semiconductor Nanostructures Novel Devices in Photonics and Electronics", edited by M. Henini, Elsevier Limited 2007
124. "Quantum Structures For Far-Infrared Detection" (A. G. U. Perera and S.G. Matsik) "Intersubband Infrared Photodetectors", (ISBN 981-238-308-5) edited by V.Ryzhii, 229-280, Academic press 2002.
123. “Silicon and GaAs as Far-infrared Detector Material” (A. G. U. Perera) “Photodetectors and Fiber Optics”, (ISBN 0-12-513908-x) edited by H. S. Nalwa, 204-234, Academic Press 2001.
122. “Semiconductor Photoemissive Structures For Far Infrared Detection” (A. G. U. Perera) “Handbook of Thin Film Devices", (ISBN 0-12-550760-7) co-editors, A. G. U. Perera and H. C. Liu , Maurice H. Francombe, Vol 2, 135-167, San Deigo, Academic press 2000.
121. "Quantum Well Devices For Infrared Emission" (A. G. U. Perera, J. -W. Choe and M. H. Francombe) "Physics of Thin films", editors, J. Vossen and M. H. Francombe, Volume 23, 217-298, San Diego, Academic press 1998.
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119. "Simultaneous detection of ultraviolet and infrared radiation in a single GaN/GaAlN heterojunction", (Ranga C. Jayasinghe, Gamini Ariyawansa, Nikolaus Dietz, A. G. Perera, Steven G. Matsik, Hongbo B. Yu, Ian T. Ferguson, Andrew Bezinger, Sylvain R. Laframboise, Margaret Buchanan, and Hui Chun Liu), Optics Letters Vol. 33, Iss. 21, pp. 2422–2424 (2008). (Full paper in PDF format)
118.
"Dopant
Migration-Induced Interface Dipole Effect in n-Doped GaAs/AlGaAs Terahertz
Detectors", (Jit, S.; Weerasekara, A. B.; Jayasinghe, R. C.; Matsik,
S. G.; Perera, A. G. U.; Buchanan, M.; Sproule, G. I.; Liu, H. C.; Stintz, A.;
Krishna, S.; Khanna, S. P.; Lachab, M.; Linfield, E. H.), Electron Device
Letters, IEEE, Volume 29, Issue 10, (2008). (Full
paper in PDF format)
117. "Self-consistent performance modeling for dualband detectors", (S.G. Matsik, A.G.U. Perera), J. Appl. Phys. 104, 044502 (2008).(Full paper in PDF format)
116. “Room Temperature Nano and Micro Structure Photon Detectors”, (A.G.U. Perera, P.V.V. Jayaweera, G. Ariyawansa, S.G. Matsik, K. Tennakone, M. Buchanan, H.C. Liu, X.H. Su and P. Bhattacharya), Microelectronics Journal (in press). (Full paper in PDF format)
115. “Uncooled infrared detectors for 3-5 µm and beyond”, (P.V.V. Jayaweera, S. G. Matsik, A. G. U. Perera, H. C. Liu, M. Buchanan and Z. R. Wasilewski), Appl. Phys. Lett. 93, 021105 (2008). (Full paper in PDF format)
114. “Bias-selectable tri-color tunneling quantum dot infrared photodetector for atmospheric windows”, (G. Ariyawansa, V. Apalkov, A. G. U. Perera, S. G. Matsik, G. Huang, and P. Bhattacharya), Appl. Phys. Lett.92, 111104 (2008). (Full paper in PDF format)
113.
“Optical
properties of n-doped Ga1−xMnxN epitaxial layers grown by metal-organic
chemical-vapor in mid and far "5-50 _m… IR range”, (A.
B. Weerasekara, Z. G. Hu, N. Dietz, A. G. U. Perera, A. Asghar, M.
H. Kane, M. Strassburg and I. T. Ferguson), J.
Vac. Sci. Technol. B 26(1) 52-55 Jan/Feb (2008). (Full
paper in PDF format)
112.
“Sensitization
of TiO2 and ZnO nanocrystalline films with acriflavine”,
(M.K.I. Senevirathne, P.K.D.D.P.
Pitigala, V. Sivakumar, P.V.V.
Jayaweera, A.G.U. Perera and K. Tennakone), Journal of Photochemistry and
Photobiology A: Chemistry, 195, 364-367,(2008).
111.
“A
Multi-Color Quantum Dot Intersublevel Detector with Photoresponse in the
110. "Semiconductor Terahertz Detectors and Absorption Enhancement Using Plasmons", (A. G. U. Perera, G. Ariyawansa, P. V. V. Jayaweera, S. G. Matsik, M. Buchanan and H. C. Liu), Microelectronics Journal, MEJ2237, 39, 601-606, (2008). (Full paper in PDF format)
109.
"Why
Gratzel′s cell works so well" (P.V.V.
Jayaweera, A.G.U. Perera and K. Tennakone) Inorganica
Chimica Acta, 361(3), 707-711, February (2008), (Full
paper in PDF format)
108.
“High-Temperature
Tunneling Quantum-Dot Intersublevel Detectors for Mid-Infrared to Terahertz
Frequencies” (P. Bhattacharya, Xiaohua Su, G. Ariyawansa, A. G. U.
Perera), Proceedings of the IEEE 95,
1828– 1837 (2007).
107. "Displacement currents in semiconductor quantum dots embedded dielectric media: A method for room temperature photon detection", (P. V. V. Jayaweera, A. G. U. Perera, and K. Tennakone) Applied Physics Letters 91, 063114-3, (2007).(Full paper in PDF format)
106. "Dual-band pixelless upconversion imaging devices", (L. K. Wu, H. L. Hao, W. Z. Shen, G. Aeiyawansa, A. G. U. Perera, and S. G. Matsik), Optics Letters, 32 2366-2368, (2007) (Full paper in PDF format)
105. "Carrier concentration and surface electron accumulation in indium nitride layers grown by high pressure chemical vapor deposition." (R. P. Bhatta, B. D. Thomas, A. Weerasekera, A. G. U. Perera, M. Alevli, and N. Dietz) J. Vac. Sci. Technol. A 25(4) 967-970 July (2007) (Full paper in PDF format)
104. "Wavelength and Polarization Selective Multi-Band Tunneling Quantum Dot Detectors", (A. G. U. Perera, G. Ariyawansa, V. M. Apalkov, S. G. Matsik, X. H. Su, S. Chakrabarti, and P. Bhattacharya), Opto-Electron. Rev., 15(4), 223–228 (2007).(Full paper in PDF format)
103.
“Infrared
optical anisotropy of diluted magnetic Ga1-x MnxN/c
–sapphire epilayers with a GaN buffer layer by metaloorganic chemical vapor
deposition.” (Z. G. Hu,
A. B. Weerasekara, N. Dietz
A. G. U. Perera, M.
Strassburg, M. H. Kane, A. Asghar
and
102.
"n-type
GaAs/AlGaAs Heterostructure detector with a 3.2 THz threshold frequency” (A. B. Weerasekara, M. B. M. Rinzan,
S. G. Matsik, A. G. U. Perera, M. Buchanan, H. C. Liu, G. von Winckel, A. Stintz,
and S. Krishna) Optics Letters, 32 (10), 1335-1337, (2007) (Full
paper in PDF format).
101.
“GaSb
homojunctions for Far-IR (THz) Detection” (P. V. V. Jayaweera, S. G. Matsik, and A. G. U. Perera, Y.
Paltiel, Ariel Sher and Arie Raizman, H. Luo, and H. C. Liu), Applied
Physics Letters,
90, 111109, (2007)
(Full
paper in PDF format)
100. “Effects of a p–n junction on heterojunction far infrared detectors”（S.G. Matsik, M.B.M. Rinzan, A.G.U. Perera, H.H. Tan, C. Jagadish and H.C. Liu）Infrared Physics & Technology, 50, 274-278 (2007) (Full paper in PDF format)
99. “Quantum mechanical effects in internal photoemission THz detectors” (M.B. Rinzan, S. Matsik and A.G.U. Perera) Infrared Physics & Technology, 50,199-205 (2007) (Full paper in PDF format)
98. “Performance improvements of ultraviolet/infrared dual-band detectors” (A.G.U. Perera, G. Ariyawansa, M.B.M. Rinzan, M. Stevens, M. Alevli, N. Dietz, S.G. Matsik, A. Asghar, I.T. Ferguson, H. Luo et al.) Infrared Physics & Technology, 50, 142-148 (2007) (Full paper in PDF format)
97.
“Multi-color
tunneling quantum dot infrared photodetectors operating at room temperature” (G.
Ariyawansa, A.G.U. Perera, X.H. Su,
96. “1/f Noise in dye-sensitized solar cells and NIR photon detectors” (P.V.V. Jayaweera, P.K.D.D.P. Pitigala, M.K.I. Seneviratne, A.G.U. Perera and K. Tennakone) Infrared Physics & Technology, 50, 270-273 (2007) (Full paper in PDF format)
95. “Si doped GaAs/AlGaAs terahertz detector and phonon effect on the responsivity” (A.B. Weerasekara, M.B.M. Rinzan, S.G. Matsik, A.G.U. Perera, M. Buchanan, H.C. Liu, G. von Winckel, A. Stintz and S. Krishna) Infrared Physics & Technology, 50,194-198 (2007) (Full paper in PDF format)
94.
"Spin split-off transition based IR
detectors operating at high temperatures"
(P.V.V.
Jayaweera, S.G. Matsik, K.
Tennakone, A.G.U. Perera, H.C. Liu and
93. "Optical Studies of MOCVD grown GaN based ferromagnetic semiconductorepilayers and devices"(M. H. Kane, M. Strassburg, W. E. Fenwick, A. Asghar, J. Senawiratne, D. Azamat, Z. Hu, E. Malguth, S. Graham, U. Perera, W. Gehlhoff, A. Hoffmann, N. Dietz, C. J. Summers, I. T. Ferguson) Physica Status solidi, 3 (6), 2237-2240 ( 2006) (Full paper in PDF format)
92. "Quantum structures for multiband photon detection" (A.G.U. Perera) Opto-Electronics Review, 14 (2), 103-112, (2006) (Full paper in PDF format)
91. “High Operating Temperature Split-off Band Infrared Detectors” (A. G. U. Perera, S. G. Matsik, P. V. V. Jayaweera, K. Tennakone, H. C. Liu, M. Buchanan G. Von Winckel, A. Stintz, and S. Krishna) Appl.Phys.Lett., 89, 131118, (2006) (Full paper in PDF format)
90. “The Characterization of InN layers grown by high-pressure chemical vapor deposition” (M. Alevli, G. Durkaya, W. Fenwick, A. Weerasekara, V. Woods, I. Ferguson, U. Perera and N. Dietz) Appl.Phys.Lett., Lett. 89, 112119, (2006) (Full paper in PDF format)
89.
“GaN/AlGaN
heterojunction infrared detector responding in 8-14 µm
and 20-70 µm ranges” (G.
Ariyawansa, M. B. M. Rinzan, M. Strassburg,
88.
“GaN/AlGaN
ultraviolet/infrared dual-band detector” (G. Ariyawansa, M.
B. M. Rinzan, M. Alevli, M. Strassburg,
87. “Characteristics of a Si dual-band detector responding in both near- and far-infrared regions” (G. Ariyawansa, M. B. M. Rinzan, S. G. Matsik, A. G. U. Perera, G. Hastings, H. C. Liu, M. Buchanan, G. I. Sproule, V. I. Gavrilenko, and V. P. Kuznetsov) Appl.Phys.Lett., 89, 061112, (2006) (Full paper in PDF format)
86. “Terahertz detection with tunneling quantum dot intersublevel photodetector" (X.H. Su, J. Yang, P. Bhattacharya, G. Ariyawansa, and A.G. U. Perera) Appl.Phys.Lett., 89, 031117 (2006) (Full paper in PDF format)
85. “Longitudinal–optical
phonon hole plasmon coupled modes in heavily doped p-type GaSb:Zn epitaxial
films” (Z. G. Hu, M. B. M. Rinzan, A. G. U. Perera, M. Zhu, Y.
Paltiel, A. Raizman, and A. Sher) Eur. Phys. J. B., 50,
403-410,
84. "Grouping behavior of inter-pulse time intervals for triggered pulses in an
AlGaAs/InGaAs multilayer structure"
(A. B. Weerasekara, S. G. Matsik, G. S. Cymbalyuk and A. G. U. Perera) Physica
D, 215, 159-165, (2006). (Full paper in PDF format)
83. "Lattice vibrations in hexagonal Ga1–xMnxN
epitaxial films on c-plane sapphire substrates by infrared reflectance spectra"
(Z. G. Hu, M. Strassburg, A. Weerasekara, N. Dietz, A. G. U. Perera, M. H.
Kane, A. Asghar, and I. T. Ferguson) Appl. Phys. Lett., 88, 061914,
(2006) (Full paper in PDF format)
82. “Composition dependence of the infrared dielectric function in Si- doped hexagonal AlxGa1-xN films on c-plane sapphire substrates ”(Z. G. Hu, M.Strassburg, N. Dietz. A.G. U. Perera, A. Asghar, I.T. Ferguson) Phys. Rev. B., 72, 245326, (2005) (Full paper in PDF format)
81. “Terahertz absorption in AlGaAs films and detection using heterojunctions” (M. B. M. Rinzan, A. G. U. Perera, S. G. Matsik, H. C. Liu, M. Buchanan, G. Von Winckel, A. Stintz, and S. Krishna) Infrared Physics & Technology., 47, 188–194, (2005) (Full paper in PDF format)
80. “1/f noise and dye-sensitized solar cells” (P. V. V. Jayaweera, P. K. D. D. P. Pitigala, A. G. U. Perera and K. Tennakone) Semicond. Sci. Technol. 20, L40–L42, (2005) (Full paper in PDF format)
79. “High Performance mid-infrared quantum dot infrared photodetectors” (S. Chakrabarti, A D Stiff-Roberts, X Su, P Bhattacharya, G Ariyawansa, and A. G. U. Perera) J. Phys D. Appl. Phys. 38, 2135-2141, (2005) (Full paper in PDF format)
78. “A Resonant Tunneling Quantum-Dot Infrared Photodetector” (Xiaohua Su, Subhananda Chakrabarti, Pallab Bhattacharya, Gamini Ariyawansa, and A. G. U. Perera), IEEE Journal of Quantum Electronics, 41(7), 974-979, (2005) (Full paper in PDF format)
77. “Zn-Doped GaSb Epitaxial Film Absorption Coefficients at Terahertz Frequencies and Detector Applications” (Z. G. Hu, A. G. U. Perera, Y. Paltiel, A. Raizman, & A. Sher), Journal of Applied Physics, 98, 023511, (2005) (Full paper in PDF format)
76. “Characteristics of a Tunneling Quantum-dot Infrared Photodetector Operating at Room Temperature” (P. Bhattacharya, X. H. Su, S. Chakrabarti, G. Ariyawansa, and A. G. U. Perera), Appl. Phys. Lett, 86, 191106, (2005) (Full paper in PDF format)
75. “Optical Characterizations of Heavily Doped p-type AlxGa1-xAs and GaAs Epitaxial Films at Terahertz Frequencies” (Z. G. Hu, M. B. M. Rinzan, S. G. Matsik, A. G. U. Perera, G. Von Winckel, A. Stintz, and S. Krishna), Journal of Applied Physics, 97, 093529, (2005) (Full paper in PDF format)
74. "Near- and Far-Infrared p-GaAs Dual Band Detector” (G. Ariyawansa, M.B.M. Rinzan, D. G. Esaev, S. G. Matsik, G. Hastings, A. G. U. Perera, H. C. Liu, B. N. Zvonkov, and V. I. Gavrilenko), Appl. Phys. Lett, 86, 143510, (2005) (Full paper in PDF format)
73. "AlGaAs emitter/GaAs barrier Terahertz detector with a 2.3 THz threshold,” (M.B.M. Rinzan, A. G. U. Perera, S. G. Matsik, H. C. Liu, Z. Wasilewski and M. Buchanan) Appl. Phys. Lett, 86, 071112, (2005) (Full paper in PDF format)
72. "Effect of Well Width on Three Color Quantum Dot-in-a-Well Infrared Detectors” (G. Ariyawansa, A. G. U. Perera, Senior Member, IEEE, G. S. Raghavan, G. von Winckel, A. Stintz, and Sanjay Krishna), IEEE Photonics Tech. Letts, 17, 1064-1066, (2005) (Full paper in PDF format)
71. "Effect of Doped Substrate on GaAs/AlGaAs Interfacial Workfunction IR Detector Response through Cavity Effect" (S. G. Matsik, M. B. M. Rinzan, D. G. Esaev, A. G. U. Perera, G. Von Winckel, A. Stintz, and S. Krishna) IEEE Transactions on Electron Devices, 52 (3), 413-418, (2005) (Full paper in PDF format)
70. "Characteristics of a Multicolor InGaAS--GaAs Quantum-Dot Infrared Photodetector" (S. Chakrabarti, Member, IEEE, X. H. Su, P. Bhattacharya, Fellow, IEEE, G. Ariyawansa, and A.G.U. Perera) IEEE Photonics Technology Letters , 17 (1), 178-180, (2005) (Full paper in PDF format)
69. "Dye-sensitized Near-infrared Room-temperature Photovoltaic Photon Detectors" (P.V.V. Jayaweera, A.G.U. Perera, M.K.I. Senevirathna, P.K.D.D.P. Pitigala, and K. Tennakone) Applied Physics Letter, 85 (23), 5754-5756, (2004) (Full paper in PDF format)
68. "Free Carrier Absorption in Be-doped Epitaxial AlGaAs Thin Films" (M. B. M. Rinzan, D. G. Esaev, A. G. U. Perera, S. G. Matsik, G. Von Winckel, A. Stintz, and S. Krishna) Applied Physics Letter, 85 (22), 5236-5238, (2004) (Full paper in PDF format)
67. "Design and Optimization of GaAs/AlGaAs Heterojunction Infrared Detectors." (D. G. Esaev, M. B. M. Rinzan, S. G. Matsik, and A. G. U. Perera) Journal of Applied Physics, 96 (8), 4588-4597, (2004) (Full paper in PDF format)
66. "Construction of a Photovoltaic Device by Deposition of Thin Films of the Conducting Polymer Polythiocyanogen", (V.P.S. Perera, P.V.V. Jayaweera, P.K.D.D.P. Pitigala, P.K.M. Bandaranayake, G. Hastings, A. G. U. Perera, K. Tennakone) Synthetic Metals, 143, 283-287, (2004) (Full paper in PDF format)
65. "High Performance Single Emitter Homojunction Interfacial Workfunction Far Infrared Detectors", (D. G. Esaev, M. B. M. Rinzan, S. G. Matsik, A. G. U. Perera, H. C. Liu, B. N. Zvonkov , V. I. Gavrilenko and A. A. Belyanin) Journal of Applied Physics, 95 (2), 512-519, (2004) (Full paper in PDF format)
64. "20 Micron Cutoff Heterojunction Interfacial Work Function Internal Photoemission Detectors", ( S. G. Matsik, M. B. M. Rinzan, D. G. Esaev, A. G. U. Perera, H. C. Liu and M. Buchanan) Applied Physics letters, 84 (18), 3435-3437, (2004) (Full paper in PDF format)
63. "The Effects of Light–Heavy Hole Transitions on the Cutoff Wavelengths of Far Infrared Detectors", (A. G. U. Perera, S. G. Matsik, M. B. M. Rinzan, A. Weerasekara, M. Alevli, H. C. Liu, M. Buchanan, B. Zvonkov and V. Gavrilenko) Infrared Physics & Technology, 44 (5-6), 347-353, (2003) (Full paper in PDF format)
62. "Three-color (λ1~3.8 µm, λ1~8.5 µm, and λ1~23.2 µm) InAs/InGaAs quantum-dots-in-a-well detecto", (G. Ariyawansa, S. G. Matsik, A. G. U. Perera, S. Krishna, S. Raghavan, G. von Winckel, and A. Stintz) Applied Physics Letters, 83 (14), 2745-2747, (2003) (Full paper in PDF format)
61. "Resonant cavity enhancement in heterojunction GaAs/AlGaAs terahertz detectors", (D. G. Esaev, S. G. Matsik, M. B. M. Rinzan, A. G. U. Perera and H. C. Liu) Journal of Applied Physics, 93 (4), 1879 ~ 1883, (2003) (Full paper in PDF format)
60. "Cutoff tailorability of heterojunction terahertz detectors", ( S. G. Matsik, M. B. M. Rinzan, A. G. U. Perera, H. C. Liu, Z. R. Wasilewski, and M. Buchanan) Appl. Phys. Lett. 82 (1), 139-141, (2003) (Full paper in PDF format)
59. “Transient Photocurrent Overshoot in Quantum-well Infrared Photodetectors”, (V. Letov, M. Ershov, S.G. Matishik, and A. G. U. Perera) Appl. Phys. Lett. 79 (13), 2094-2096, (2001) (Full paper in PDF format)
58.
"Spontaneous
Oscillations and Triggered Pulsing in GaAs/InGaAs Multiquantum Well
Structures ",
(A. G. U. Perera, S. G. Matsik, V. Y. Letov, H. C. Liu, M. Gao, M. Buchanan,
W. J. Schaff) Solid-state Electronics, 45 (7), 1121-1125, (2001)
(Full paper in PDF
format)
57. "35 µm Cutoff
Bound-toquasibound and Bound-to-continuum InGaAs QWIPs ", (A. G. U. Perera, S. G.
Matsik, H. C. Liu, M. Gao, M. Buchanan, W. J. Schaff, and W. Yeo) Infrared
Physics & Technology, 42, 157-162, (2001) (Full paper in PDF
format)
56.
"Space Charge
Spectroscopy of Intergrated Quantum Well Infrared Photodetector--Light
Emitting Diode ", (M. Ershov, B. Yaldiz, A. G.
U. Perera, S. G. Matsik, H. C. Liu, M. Buchanan, Z. R. Wasilewski, and M. D.
Willams), Infrared Physics & Technology, 42, 259-265, (2001) (Full paper in PDF
format)
55.
“Experimental
Observation of Transitent Photocurrent Overshoot in Quantum Well Infrared
Photodetectors ", (V. Letov, A. G. U. Perera, M.
Ershov, H. C. Liu, M. Buchanan, and Z. R. Wasilewski), Infrared Physics &
Technology, 42, 243-247, (2001) (Full paper in PDF
format)
54.
"Chaotic Dynamics in
Terahertz-driven Semiconductors with Negative Effective Mass ", (J. C. Cao, H. C. Liu, X. L.
Lei, A. G. U. Perera) Physical Review B., 63, 115308, (2001) (Full paper in PDF
format)
53.
"Heterojunction
Wavelength-Tailorable Far-Infrared Photodetectors with Response out to 70
Microns", ( A.
G. U. Perera, S. G. Matsik, B. Yaldiz, H. C. Liu, A. Shen, M. Gao, Z. R.
Wasilewski and M. Buchanan), Appl. Phys. Lett.,
78, 2241~2243, (2001) (Full paper
in PDF format)
52.
"Low Dark Current Far
Infrared Detector with an Optical Cavity Architecture", (A. L. Korotkov, A. G. U.
Perera, W. Z. Shen, H. C. Liu, M. Buchanan), Solid-State Electronics, 45,
87-93, (2001) (Full paper in PDF
format)
51.
"Free-carrier
Absorption in Be- and C-doped GaAs Epilayers and Far Infrared Detector
Applications",
(A. L. Korotkov, A. G. U. Perera, W. Z. Shen, J. Herfort, K. H. Ploog, W. J.
Schaff and H. C. Liu), Journal of Applied Physics, 89 (6), 3295~3300,
(2001) (Full
paper in PDF format)
50.
“GaAs/InGaAs Quantum
Well Infrared Photodetector with a Cutoff Wavelength at 35 µm ”, (A. G. U. Perera, S. G.
Matsik, H. C. Liu, M. Gao, M. Buchanan, W. J. Schaff and W. Yeo), Applied
Physics Letters, 77, 741~743, (2000) (Full paper in PDF
format)
49. “GaAs Homojunction
Interfacial Workfunction Internal Photoemission (HIWIP) Far-infrared
Detectors", (A. G. U. Perera, W. Z. Shen, H. C. Liu, M. Buchanan, and
W. J. Schaff), Material Science and Engineering, B74, 56~60,
(2000) (Full paper in PDF
format)
48.
"Optical Interference
and Nonlinearities in Quantum-well Infrared Photodetectors", (M. Ershov,
H.C. Liu, A. G. U. Perera and S. G. Matsik), Physica E, 7,115~119,
(2000)
(Full
paper in PDF format)
47.
"Effect of Interface
States on the Performance of GaAs p+ –i Far–infrared Detectors", (A. G. U.
Perera,W. Z. Shen and M. Ershov; H. C. Liu and M. Buchanan; S. D. Gunapala, S.
V. Bandara, and J. K. Liu; H. H. Ye and W. J. Schaff), JVST A, 18 (2)
597~600, (2000) (Full paper in PDF
format)
46.
“Effects of Traps
on the Dark Current Transients in GaAs/AlGaAs Quantum Well Infrared
Photodetectors", ( A. G. U. Perera, S. G. Matsik, M. Ershov, Y. W. Yi, H.
C. Liu, M. Buchanan, and Z. R. Wasilewski), Physica E, 7, 130~134,
(2000) (Full paper in
PDF format)
45.
“Theory of
Transient Spectroscopy of Multiple Quantum Well Structures”, (M. Ershov,
H. Ruda, A. Shik andA. G. U. Perera), Journal of Applied Physics, 86 (3),
1510-1513, (1999) (Full
paper in PDF format)
44.
"GaAs Homojunction
Interfacial Workfunction Internal Photoemission (HIWIP) Far-infrared
Detectors", (A. G. U. Perera and W. Z. Shen), Journal of the
Association of Polish Electrical Engineers, Opto-Electronics Review 7
(3),
(1999).
43.
“Negative Capacitance
of GaAs Homojunction Far-infrared Detectors”, (A. G. U. Perera, W. Z.
Shen, M. Ershov, H. C. Liu, M. Buchanan, and W. J. Schaff), Applied Physics
Letters, 74 (21), 3167-3169(1999). (Full paper in PDF
format)
42.
“Low-frequency Noise
and Interface States in GaAs Homojunction Far-infrared Detectors”, (W.
Z. Shen andA. G. U. Perera), IEEE Transactions on Electron Devices, 46
(4), 811-814(1999).
41.
"Demonstration of Si
homojunction far-infrared detectors ", (A. G. U. Perera, W. Z. Shen, S. G.
Matsik, H. C. Liu, M. Buchanan, and W. J. Schaff), Applied Physics Letters, 72
(18), 2307-2309, (1998)
40.
"GaAs/AlGaAs Quantum
Well Photodetector with 27 micron peak Wavelength", (A. G. U. Perera, W.
Z. Shen, S. G. Matsik, H. C. Liu, M. Buchanan, and W. J. Schaff) Applied
Physics Letters, 72 (13), 1596-1598, (1998) (Full paper in PDF
format)
39.
"Effect of emitter
layer concentration on the performance of GaAs p+-i homojunction far-infrared
detectors: A comparison of Theory and Experiment" (W. Z. Shen, A. G. U.
Perera, M. H. Francombe, H. C. Liu, M. Buchanan and W. J. Schaff) IEEE
transactions of Electron Devices, 45 (8), 1671-1677, (1998) (Full paper in PDF
format)
38.
"Photoconductivity in
homojunction Internal Photoemission Infrared Detectors", (W. Z. Shen and
A. G. U. Perera) Infrared Physics and Technology, 39, 329~333, (1998).
37.
"Photoconductive
Generation Mechanism and Gain in Internal Photoemission Infrared
Detectors", (W. Z. Shen and A. G. U. Perera) J. Appl. Phys, 83 (7),
3923-3925, (1998)
36.
"Nonuniform vertical
Charge Transport and Relaxation in Quantum Well Infrared Detectors", (A.
G. U. Perera, V. G. Sylvestrov, S. G. Matsik, H. C. Liu, M. Buchanan, Z. R.
Wasilewski and M. Ershov) J. Appl. Phys., 83 (2), 991-997, (1998)