Space charge spectroscopy of integrated quantum well infrared photodetector -- light emitting diode

M. Ershov, B. Yaldiz, A. G. U. Perera, and S. G. Matsik

Department of Physics and Astronomy, Georgia State University, Atlanta, GA 30303

H. C. Liu, M. Buchanan and Z. R. Wasilewski

Instute for Microstructural Sciences, National Research Council, Ottawa, Ontario K1A 0R6, Canada

M. D. Williams

Department of Physics, Clark Atlanta University, Atlanta, GA30314

Abstract

We present the results of the space charge spectroscopy of integrated quantum will infrared photodetector -- light emitting diode (QWIP-LED). Quasistatic capacitance-voltage (C-V) characteristics under reverse bias display a step-like behavior due to a step-wise extension of the space charge region with bias. The parameters of the steps, and the frequency dispersion of the capacitance are used to determine the QW period thickness, QW doping level, and the number of QW periods. Measurement of the QWIP-LED admittance at various temperatures is used to obtain the QW activation energy and the conduction band offset.

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