Structural and Surface-Morphological Analysis of InN Layers Grown by HPCVD
Dept. of Physics & Astronomy, GSU
Tuesday - Sept. 23, 2008
3:30pm - 4:30 pm
218 NSC
MS-Physics
We present results of optical and structural characterization experiments on InN that is a promising group III-nitride material for development of advanced optoelectronic structures. InN layers investigated in the contribution were grown by high-pressure chemical vapor deposition (HPCVD) method, a technique that has been developed to counter the vast different partial pressures in this material system. In this study, we utilize and correlate Raman, XRD and AFM data to analyze the structural and electrical properties of the InN layers.