Applications of GaN-AlInGaN Multi-Quantum Wells In High Power Microwave
Transistors and Blue-Green Light Emitting Diodes
Asif Khan
Department of Electrical and Computer Engineering
University of South Carolina
Due to their excellent light emission properties, AlInGaN-GaN heterojunctions
have attracted much attention in recent days. Several groups
have demonstrated high brightness LEDs and lasers. We have also reported
on heterojunction field-effect-transistors and UV sensors using superior
transport properties of the 2-dimensional electron gas in the GaN-AlGaN
heterstructures. We have now extended this work by including indium
in the channel and the barrier region of transistor devices. This approach
has the potential of yielding lattice matched heterojunctions. It
thus allows us to study the effect of strain on the piezo- and pyro-electric
properties of the AlInGaN material system. We plan to use these strain-engineered
structures for fabricating innovative opto-electronic devices.
Our research group at University of South Carolina has focussed on low
pressure MOCVD growth of AlGaInN-GaN heterojunctions. In-house lithography,
metallization and dry etching systems are then used to fabricate planar
and vertical geometry devices. Results will be presented on the fabrication
and characterization of new transistor and sensor structures.
Dr. Asif Khan,
Professor and Director Microelectronics Lab
Department of Electrical and Computer Engineering
Room 3A-28, Swearingen Building
University of South Carolina
Columbia SC 29208
Tel: 803-777-7941
Fax: 803-777-2447
Email: asif@engr.sc.edu