Overscreening in Strongly Correlated Electron Systems

 

 H.-B. Schuttler

 Center for Simulational Physics

 Department of Physics and Astronomy

 University of Georgia

 

 During the last five years, the existence of a d-wave  pairing state in several cuprate high-temperature  superconductors  has been firmly established by Josephson  tunneling, London penetration depth, photo emission,  Raman scattering, and other experimental probes.  Yet, at least in some cuprate materials, there is  also mounting evidence for a fully gapped conventional  s-wave pairing state. In this seminar talk I will  revisit the question of competing pairing states  by studying the screening of the effective  electron-electron interaction potential within the  framework of Hubbard and extended Hubbard strongly  correlated electron models. I will show that, in the  presence of a sufficiently strong on-site Coulomb  repulsion U, the screened interaction potential V_S  develops a strong "overscreening" effect as the electron  band filling is changed by doping away from the  insulating half-filled band limit. At lower doping,  <~15%, V_S thus develops a near neighbor attraction  which can support a d-wave pairing state. At larger  doping, >~15%, even the on-site U repulsion is supressed  by the overscreening effect and the screened on-site  potential becomes attractive, thereby supporting an  s-wave pairing state. An exact proof for the existence  of on-site overscreening will be presented. Implications  of the overscreening effect for possible novel s weak-coupling approaches to the strongly correlated  electron problem will be discussed.