Fueled by the broad need for infrared technology, HgCdTe materials and device technology have matured significantly over the last two decades. During this time, HdCdTe grown by MBE has emerged as the ultimate choice for infrared focal plane arrays. Furthermore, the growth of high quality HdCdTe/CdTe/Si is revolutionizing the future infrared technology. Large are infrared focal plane array based on HgCdTe/CdTe/Si are currently under commercialization. This has paved the way for future development of monolithic hyper spectral multicolor large area focal plane arrays.
A detailed analysis of the historical development and the current state of the art MBE HgCdTe based infrared technology will be presented. In particular, we shall focus on the issues such as doping (both n-type and p-type), growth and interface formation on CdTe on Si and device performance of HgCdTe grown by MBE.