Publications by B. D. Thoms

A differentially pumped electron-energy-loss spectrometer with multichannel detector for time-resolved studies at intermediate ambient pressures.
P. W. Lorraine, B. D. Thoms, and W. Ho.
Review of Scientific Instruments 63, 1652 (1992).

Translationally and vibrationally activated reaction of CO₂ on Si(111)7x7.
P. W. Lorraine, B. D. Thoms, R. A. Machonkin, and W. Ho.
Journal of Chemical Physics 96, 3285 (1992).

A molecular beam study of ethane on Si(111)7x7: Energy accommodation and trapping.
B. D. Thoms, P. W. Lorraine, and W. Ho.
Journal of Chemical Physics 97, 2759 (1992).

Oxidation of CVD Diamond Studied by High Resolution Electron Energy Loss Spectroscopy.
P. E. Pehrsson, B. D. Thoms, and J. E. Butler.
Proceedings of the 3rd International Symposium on Diamond Materials, Diamond Materials Vol. 93-17,
(The Electrochemical Society, Pennington, NJ, 1993) p. 661.

A vibrational study of the adsorption and desorption of hydrogen on polycrystalline diamond.
B. D. Thoms, P. E. Pehrsson, and J. E. Butler.
Journal of Applied Physics 75, 1804 (1994).

Adsorption and abstraction of hydrogen on polycrystalline diamond.
B. D. Thoms, J. N. Russell, Jr., P. E. Pehrsson, and J. E. Butler.
Journal of Chemical Physics 100, 8425 (1994).

Production and characterization of smooth, hydrogen-terminated diamond C(100).
B. D. Thoms, M. S. Owens, J. E. Butler, and C. Spiro.
Applied Physics Letters 65, 2957 (1994).

HREELS scattering mechanism from hydrogenated diamond.
B. D. Thoms and J. E. Butler.
Physical Review B 50, 17450 (1994).

Isothermal desorption of hydrogen from polycrystalline diamond films.
D. D. Koleske, S. M. Gates, B. D. Thoms, J. N. Russell, Jr., and J. E. Butler.
Surface Science Letters 320, L105 (1994).

Diamond Surface Chemistry.
P. E. Pehrsson, J. N. Russell, Jr., B. D. Thoms, J. E. Butler, M. Marchywka, and J. M. Calvert.
1994 Naval Research Laboratory Review, p. 61-71.

Diamond Surface Chemistry.
J. E. Butler, B. D. Thoms, M. McGonigal, J. N. Russell, Jr., and P. E. Pehrsson.
in Advanced Materials ‘94, M. Kamo, H. Kanda, Y. Matsui, and T. Sekine, eds. (NIRIM, Tsukuba, Japan, 1994).

Hydrogen on polycrystalline diamond films: Studies of isothermal desorption and atomic deuterium abstraction.
D. D. Koleske, S. M. Gates, B. D. Thoms, J. N. Russell, Jr., and J. E. Butler.
Journal of Chemical Physics 102, 992 (1995).

HREELS and LEED of H/C(100): The 2x1 monohydride dimer row reconstruction.
B. D. Thoms and J. E. Butler.
Surface Science 328, 291 (1995).

Hydrogen Chemistry on Diamond Surfaces.
J. E. Butler, B. D. Thoms, M. McGonigal, J. N. Russell, Jr., and P. E. Pehrsson.
in Wide Band Gap Electronic Materials.
Edited by M. A. Prelas et al. (Kluwer Academic Publishers, Dordecht, Netherlands, 1995) pp. 105-114.

Identification of a surface azide from the reaction of HN₃ with C(100).
B. D. Thoms and J. N. Russell, Jr.
Surface Science Letters 337, L807 (1995) .

Surface Oxidation Chemistry of beta-SiC.
P. E. Pehrsson and B. D. Thoms,
Journal of Vacuum Science and Technology A 15, 1 (1997).

Modifying the Diamond C(100) Surface.
B. D. Thoms
in Advanced Materials ‘97, Y. et. al., eds. (NIRIM, Tsukuba, Japan, 1997).

Gallium Arsenide Surface Chemistry and Surface Damage in a Chlorine High Density Etch Process.
C. R. Eddy, Jr., O. J. Glembocki, V. A. Shamamian, D. Leonhardt, R. T. Holm, B. D. Thoms, J. E. Butler, and S. W. Pang.
Journal of Electronic Materials 26, 1320 (1997).

Characterization of GaAs Surfaces Subjected to a Cl₂/Ar High Density Plasma Etching Process.
C. R. Eddy, Jr., O. J. Glembocki, V. A. Shamamian, D. Leonhardt, R. T. Holm, J. E. Butler, B. D. Thoms, S. W. Pang, K. K. Ko, E. W. Berg, and C. E. Stutz.
in Control of Semiconductor Surfaces and Interfaces
(MRS Proceedings Vol. 448), Edited by S. M. Prokes et al. (Materials Research Society, Pittsburgh, PA, 1997).

Ion Energy Effects on Surface Chemistry and Damage in a High Density Plasma Etch Process for Gallium Arsenide. D. Leonhardt, C.R. Eddy, Jr., V. A. Shamamian, R. T. Holm, O. J. Glembocki, B. D. Thoms, D. S. Katzer, and J. E. Butler.
Japanese Journal of Applied Physics 37, L577 (1998).

Characterization of Cl2/Ar High Density Plasmas for Semiconductor Etching.
C.R. Eddy, Jr., D. Leonhardt, S.R. Douglass, B.D. Thoms, V.A. Shamamian and J.E. Butler.
Journal of Vacuum Science & Technology A 17, 38 (1999).

Characterization of High Density CH₄/H₂/Ar Plasmas for Compound Semiconductor Etching.
C.R. Eddy, Jr., D. Leonhardt, S.R. Douglass, V.A. Shamamian, B.D. Thoms, and J.E. Butler.
Journal of Vacuum Science & Technology A 17, 780 (1999).

HREELS of H/GaN(0001): Evidence for Ga Termination.
V. J. Bellitto, B. D. Thoms, D. D. Koleske, A. E. Wickenden, and R. L. Henry.
Surface Science 430, 80 (1999).

Electronic Structure of H/GaN(0001): An ELS Study of Ga-H Formation.
V. J. Bellitto, B. D. Thoms, D. D. Koleske, A. E. Wickenden, and R. L. Henry.
Physical Review B 60, 4816 (1999).

Efficient Electron Stimulated Desorption of Hydrogen from GaN(0001).
V. J. Bellitto, B. D. Thoms, D. D. Koleske, A. E. Wickenden, and R. L. Henry.
Physical Review B 60, 4821 (1999).

Desorption of hydrogen from GaN(0001) observed by HREELS and ELS.
V. J. Bellitto, Y. Yang, B. D. Thoms, D. D. Koleske, A. E. Wickenden, and R. L. Henry.
Surface Science Letters 442, L1019 (1999).

Adsorption and Desorption of Hydrogen on GaN(0001).
Y. Yang, V. J. Bellitto, B. D. Thoms, D. D. Koleske, A. E. Wickenden, and R. L. Henry.
Materials Science Forums 338-342, 1533 (2000).

Extremely Efficient Electron Stimulated Desorption of Hydrogen from GaN(0001). 
V. J. Bellitto, B. D. Thoms, D. D. Koleske, A. E. Wickenden, and R. L. Henry. 
Materials Science Forums Vols. 338-342, 1537 (2000).

The Reaction of Oxygen with GaN(0001). 
B. D. Thoms, V. J. Bellitto, Y. Yang, D.D. Koleske, A. E. Wickenden, and R. L. Henry. 
Materials Science Forums Vols. 338-342, 1541 (2000).

Oxygen Adsorption on the (110)-Oriented Diamond Surface.

Bob L. Mackey, John N. Russell, Jr., John E. Crowell, Pehr E. Pehrsson, Brian D. Thoms, and James E. Butler.

Journal of Physical Chemistry B 105, 3803 (2001).

Mass Spectrometry Sampling Method for Characterizing High-density Plasma Etching Mechanisms.

C.R. Eddy, Jr., D. Leonhardt, V.A. Shamamian, J.E. Butler, and B.D. Thoms.

Applied Physics Letters 82, 3626 (2003).

Surface Structure, Composition, and Polarity of Indium Nitride Grown by High Pressure Chemical Vapor Deposition.

R. P. Bhatta, B. D. Thoms, M. Alevli, V. Woods, and N. Dietz.

Applied Physics Letters 88, 122112 (2006).

Carrier concentration and surface electron accumulation in indium nitride layers grown by high pressure chemical vapor deposition.

R. P. Bhatta, B. D. Thoms, A. Weerasekera, A. G. U. Perera, M. Alevli, and N. Dietz,

J. Vac. Sci. Technol. A 25, 967 (2007).

Surface Electron Accumulation in Indium Nitride Layers Grown by High Pressure Chemical Vapor Deposition.

R. P. Bhatta, B. D. Thoms, M. Alevli, and N. Dietz

Surface Science Letters, in press.

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