Publications by B. D. Thoms

Desorption of hydrogen from InN(000-1) observed by HREELS.

R. P. Bhatta, B. D. Thoms, M. Alevli, and N. Dietz

Surface Science 602. 1428 (2008).

Surface Electron Accumulation in Indium Nitride Layers Grown by High Pressure Chemical Vapor Deposition.

R. P. Bhatta, B. D. Thoms, M. Alevli, and N. Dietz

Surface Science 601. L120 (2007).

Carrier concentration and surface electron accumulation in indium nitride layers grown by high pressure chemical vapor deposition.

R. P. Bhatta, B. D. Thoms, A. Weerasekera, A. G. U. Perera, M. Alevli, and N. Dietz,

J. Vac. Sci. Technol. A 25, 967 (2007).

Surface Structure, Composition, and Polarity of Indium Nitride Grown by High Pressure Chemical Vapor Deposition.

R. P. Bhatta, B. D. Thoms, M. Alevli, V. Woods, and N. Dietz.

Applied Physics Letters 88, 122112 (2006).

Mass Spectrometry Sampling Method for Characterizing High-density Plasma Etching Mechanisms.

C.R. Eddy, Jr., D. Leonhardt, V.A. Shamamian, J.E. Butler, and B.D. Thoms.

Applied Physics Letters 82, 3626 (2003).

Oxygen Adsorption on the (110)-Oriented Diamond Surface.

Bob L. Mackey, John N. Russell, Jr., John E. Crowell, Pehr E. Pehrsson, Brian D. Thoms, and James E. Butler.

Journal of Physical Chemistry B 105, 3803 (2001).

The Reaction of Oxygen with GaN(0001). 
B. D. Thoms, V. J. Bellitto, Y. Yang, D.D. Koleske, A. E. Wickenden, and R. L. Henry. 
Materials Science Forums Vols. 338-342, 1541 (2000).

Extremely Efficient Electron Stimulated Desorption of Hydrogen from GaN(0001). 
V. J. Bellitto, B. D. Thoms, D. D. Koleske, A. E. Wickenden, and R. L. Henry. 
Materials Science Forums Vols. 338-342, 1537 (2000).

Adsorption and Desorption of Hydrogen on GaN(0001).
Y. Yang, V. J. Bellitto, B. D. Thoms, D. D. Koleske, A. E. Wickenden, and R. L. Henry.
Materials Science Forums 338-342, 1533 (2000).

Desorption of hydrogen from GaN(0001) observed by HREELS and ELS.
V. J. Bellitto, Y. Yang, B. D. Thoms, D. D. Koleske, A. E. Wickenden, and R. L. Henry.
Surface Science Letters 442, L1019 (1999).

Efficient Electron Stimulated Desorption of Hydrogen from GaN(0001).
V. J. Bellitto, B. D. Thoms, D. D. Koleske, A. E. Wickenden, and R. L. Henry.
Physical Review B 60, 4821 (1999).

Electronic Structure of H/GaN(0001): An ELS Study of Ga-H Formation.
V. J. Bellitto, B. D. Thoms, D. D. Koleske, A. E. Wickenden, and R. L. Henry.
Physical Review B 60, 4816 (1999).

HREELS of H/GaN(0001): Evidence for Ga Termination.
V. J. Bellitto, B. D. Thoms, D. D. Koleske, A. E. Wickenden, and R. L. Henry.
Surface Science 430, 80 (1999).

Characterization of High Density CH₄/H₂/Ar Plasmas for Compound Semiconductor Etching.
C.R. Eddy, Jr., D. Leonhardt, S.R. Douglass, V.A. Shamamian, B.D. Thoms, and J.E. Butler.
Journal of Vacuum Science & Technology A 17, 780 (1999).

Characterization of Cl2/Ar High Density Plasmas for Semiconductor Etching.
C.R. Eddy, Jr., D. Leonhardt, S.R. Douglass, B.D. Thoms, V.A. Shamamian and J.E. Butler.
Journal of Vacuum Science & Technology A 17, 38 (1999).

Ion Energy Effects on Surface Chemistry and Damage in a High Density Plasma Etch Process for Gallium Arsenide.
D. Leonhardt, C.R. Eddy, Jr., V. A. Shamamian, R. T. Holm, O. J. Glembocki, B. D. Thoms, D. S. Katzer, and J. E. Butler.
Japanese Journal of Applied Physics 37, L577 (1998).

Characterization of GaAs Surfaces Subjected to a Cl₂/Ar High Density Plasma Etching Process.
C. R. Eddy, Jr., O. J. Glembocki, V. A. Shamamian, D. Leonhardt, R. T. Holm, J. E. Butler, B. D. Thoms, S. W. Pang, K. K. Ko, E. W. Berg, and C. E. Stutz.
in Control of Semiconductor Surfaces and Interfaces
(MRS Proceedings Vol. 448), Edited by S. M. Prokes et al. (Materials Research Society, Pittsburgh, PA, 1997).

Gallium Arsenide Surface Chemistry and Surface Damage in a Chlorine High Density Etch Process.
C. R. Eddy, Jr., O. J. Glembocki, V. A. Shamamian, D. Leonhardt, R. T. Holm, B. D. Thoms, J. E. Butler, and S. W. Pang.
Journal of Electronic Materials 26, 1320 (1997).

Modifying the Diamond C(100) Surface.
B. D. Thoms
in Advanced Materials ‘97, Y. et. al., eds. (NIRIM, Tsukuba, Japan, 1997).

Surface Oxidation Chemistry of beta-SiC.
P. E. Pehrsson and B. D. Thoms,
Journal of Vacuum Science and Technology A 15, 1 (1997).

Identification of a surface azide from the reaction of HN₃ with C(100).
B. D. Thoms and J. N. Russell, Jr.
Surface Science Letters 337, L807 (1995).

Hydrogen Chemistry on Diamond Surfaces.
J. E. Butler, B. D. Thoms, M. McGonigal, J. N. Russell, Jr., and P. E. Pehrsson.
in Wide Band Gap Electronic Materials.
Edited by M. A. Prelas et al. (Kluwer Academic Publishers, Dordecht, Netherlands, 1995) pp. 105-114.

HREELS and LEED of H/C(100): The 2x1 monohydride dimer row reconstruction.
B. D. Thoms and J. E. Butler.
Surface Science 328, 291 (1995).

Hydrogen on polycrystalline diamond films: Studies of isothermal desorption and atomic deuterium abstraction.
D. D. Koleske, S. M. Gates, B. D. Thoms, J. N. Russell, Jr., and J. E. Butler.
Journal of Chemical Physics 102, 992 (1995).

Diamond Surface Chemistry.
J. E. Butler, B. D. Thoms, M. McGonigal, J. N. Russell, Jr., and P. E. Pehrsson.
in Advanced Materials ‘94, M. Kamo, H. Kanda, Y. Matsui, and T. Sekine, eds. (NIRIM, Tsukuba, Japan, 1994).

Diamond Surface Chemistry.
P. E. Pehrsson, J. N. Russell, Jr., B. D. Thoms, J. E. Butler, M. Marchywka, and J. M. Calvert.
1994 Naval Research Laboratory Review, p. 61-71.

Isothermal desorption of hydrogen from polycrystalline diamond films.
D. D. Koleske, S. M. Gates, B. D. Thoms, J. N. Russell, Jr., and J. E. Butler.
Surface Science Letters 320, L105 (1994).

HREELS scattering mechanism from hydrogenated diamond.
B. D. Thoms and J. E. Butler.
Physical Review B 50, 17450 (1994).

Production and characterization of smooth, hydrogen-terminated diamond C(100).
B. D. Thoms, M. S. Owens, J. E. Butler, and C. Spiro.
Applied Physics Letters 65, 2957 (1994).

Adsorption and abstraction of hydrogen on polycrystalline diamond.
B. D. Thoms, J. N. Russell, Jr., P. E. Pehrsson, and J. E. Butler.
Journal of Chemical Physics 100, 8425 (1994).

A vibrational study of the adsorption and desorption of hydrogen on polycrystalline diamond.
B. D. Thoms, P. E. Pehrsson, and J. E. Butler.
Journal of Applied Physics 75, 1804 (1994).

Oxidation of CVD Diamond Studied by High Resolution Electron Energy Loss Spectroscopy.
P. E. Pehrsson, B. D. Thoms, and J. E. Butler.
Proceedings of the 3rd International Symposium on Diamond Materials, Diamond Materials Vol. 93-17,
(The Electrochemical Society, Pennington, NJ, 1993) p. 661.

A molecular beam study of ethane on Si(111)7x7: Energy accommodation and trapping.
B. D. Thoms, P. W. Lorraine, and W. Ho.
Journal of Chemical Physics 97, 2759 (1992).

Translationally and vibrationally activated reaction of CO₂ on Si(111)7x7.
P. W. Lorraine, B. D. Thoms, R. A. Machonkin, and W. Ho.
Journal of Chemical Physics 96, 3285 (1992).

A differentially pumped electron-energy-loss spectrometer with multichannel detector for time-resolved studies at intermediate ambient pressures.
P. W. Lorraine, B. D. Thoms, and W. Ho.
Review of Scientific Instruments 63, 1652 (1992).

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